?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA20S140P rev. c1 october 2012 FGA20S140P shorted anode tm igbt absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1: limited by tjmax symbol description ratings units v ces collector to emitter voltage 1400 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c 40 a collector current @ t c = 100 o c 20 a i cm (1) pulsed collector current 60 a i f diode continuous forward current @ t c = 25 o c 40 a i f diode continuous forward current @ t c = 100 o c 20 a p d maximum power dissipation @ t c = 25 o c 272 w maximum power dissipation @ t c = 100 o c 136 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case -- 0.55 o c / w r ja thermal resistance, junction to ambient -- 40 o c / w g c e to-3pn g c e FGA20S140P shorted anode tm igbt features ? high speed switching ? low saturation voltage: v ce(sat) =1.9v @ i c = 20a ? high input impedance ? rohs compliant applications ? induction heating and microwave oven ? soft switching applications general description using advanced field stop trench and shorted anode technol- ogy, fairchilds shorted anode tm trench igbts offer superior conduction and switching performances, and easy par allel oper- ation with exceptional avalanche capability. this d evice is designed for induction heating and microwave oven.
2 www.fairchildsemi.com FGA20S140P rev. c1 FGA20S140P shorted anode tm igbt package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quant ity FGA20S140P FGA20S140P to-3pn - - 30 symbol parameter test conditions min. typ. max. units off characteristics i ces collector cut-off current v ce = 1400, v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 500 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 4.5 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v t c = 25 o c - 1.9 2.4 v i c = 20a , v ge = 15v, t c = 125 o c - 2.1 - v i c = 20a , v ge = 15v, t c = 175 o c - 2.2 - v v fm diode forward voltage i f = 20a , t c = 25 o c - 1.7 2.4 v i f = 20a , t c = 175 o c - 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1686 - pf c oes output capacitance - 45 - pf c res reverse transfer capacitance - 32 - pf switching characcteristics t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 25 o c - 20 ns t r rise time - 245 - ns t d(off) turn-off delay time - 400 - ns t f fall time - 130 169 ns e on turn-on switching loss - 0.76 - mj e off turn-off switching loss - 0.56 0.73 mj e ts total switching loss - 1.32 - mj t d(on) turn-on delay time v cc = 600v, i c = 20a, r g = 10 , v ge = 15v, resistive load, t c = 175 o c - 21 - ns t r rise time - 301 - ns t d(off) turn-off delay time - 420 - ns t f fall time - 356 - ns e on turn-on switching loss - 0.95 - mj e off turn-off switching loss - 1.39 - mj e ts total switching loss - 2.34 - mj q g total gate charge v ce = 600v, i c = 20a, v ge = 15v - 203.5 - nc q ge gate to emitter charge - 10.8 - nc q gc gate to collector charge - 84.6 - nc
3 www.fairchildsemi.com FGA20S140P rev. c1 FGA20S140P shorted anode tm igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteri stics figure 3. typical saturation voltage figure 4. transfer characteristic s characteritics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 20 40 60 80 100 120 140 160 9v 8v 17v t c = 175 o c 15v 12v 10v v ge = 20v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.5 3.0 4.5 6.0 7.5 0 20 40 60 80 100 120 140 160 8v v ge = 17v 10v 9v 20v t c = 25 o c 15v 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 20 40 60 80 100 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0.0 1.0 2.0 3.0 4.0 5.0 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 40a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 5 10 15 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com FGA20S140P rev. c1 FGA20S140P shorted anode tm igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs figure 12. turn-off characteristics vs . gate resistance gate resistance 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 5 10 15 20 25 30 1 10 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 30 60 90 120 150 180 210 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 2000 1ms 10ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 10 20 30 40 50 60 70 10 100 200 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 5 0 10 20 30 40 50 60 70 100 1000 10000 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ]
5 www.fairchildsemi.com FGA20S140P rev. c1 FGA20S140P shorted anode tm igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14.turn-off characteristics v s. collector current coll ector current figure 15. switching loss vs. gate resistance figur e 16. switching loss vs. collector current figure 17. turn off switching soa characteristics f igure 18. forward characteristics 10 20 30 40 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 60 70 0.1 1 10 common emitter v cc = 600v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 0.1 10 20 30 40 100 1k 10k common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 30 0 1 2 1 10 80 t j = 25 o c t c = 25 o c t c = 175 o c t j = 175 o c forward voltage, v f [v] forward current, i f [a] 0.5 1 10 100 1000 1 10 100 2000 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGA20S140P rev. c1 FGA20S140P shorted anode tm igbt figure 19 . .. . transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
7 www.fairchildsemi.com FGA20S140P rev. c1 FGA20S140P shorted anode tm igbt mechanical dimensions to-3pn dimensions in millimeters
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